Datasheet > SD103CW-G

SD103CW-G

更新时间： 2024-11-17 01:14:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	94K
描述
For general purpose applications

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中文翻译

获取价格

数据手册

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SD103CW-G 数据手册

SD103AW-G, SD103BW-G, SD103CW-G

www.vishay.com

Vishay Semiconductors

Small Signal Schottky Diodes

FEATURES

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing, and coupling diodes for fast

switching and low logic level applications

• Other applications are click suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

MECHANICAL DATA

• The SD103 series is a metal-on-silicon Schottky

barrier device which is protected by a PN

junction guardring

Case: SOD-123

Weight: approx. 9.4 mg

Cathode band color: black

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

• For general purpose applications

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PARTS TABLE

INTERNAL

CONSTRUCTION

PART

ORDERING CODE

TYPE MARKING

REMARKS

SD103AW-G

SD103BW-G

SD103CW-G

SD103AW-G3-08 or SD103AW-G3-18

SD103BW-G3-08 or SD103BW-G3-18

SD103CW-G3-08 or SD103CW-G3-18

Single diode

Tape and reel

Single diode

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

V_RRM

I_F

VALUE

UNIT

SD103AW-G

SD103BW-G

SD103CW-G

Repetitive peak reverse voltage

Forward continuous current ⁽¹⁾

Power dissipation (infinite heat sink) ⁽¹⁾

Single cycle surge

350

400

P_tot

10 μs square wave

I_FSM

Note

(1)

Valid provided that electrodes are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

300

UNIT

K/W

°C

Junction temperature

125

Operating temperature range

Storage temperature range

T_op

-55 to +125

-55 to +150

°C

T_stg

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature

Rev. 1.7, 25-Aug-16

Document Number: 85160

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SD103CW-G相关器件

型号	品牌	获取价格	描述	数据表
SD103CW-GS08	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 20V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE
SD103CW-GS18	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 20V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE
SD103CWHE3	MCC	获取价格	Tape : 3K/Reel, 120K/Ctn;
SD103CWQ	YANGJIE	获取价格	SOD-123
SD103CW-Q1	ANBON	获取价格	SOD-123
SD103CWRH	TSC	获取价格	400mW, Low VF SMD Schottky Barrier Diode
SD103CWRHG	TSC	获取价格	400mW, Low VF SMD Schottky Barrier Diode
SD103CWS	SEMTECH	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD103CWS	VISHAY	获取价格	SCHOTTKY DIODES
SD103CWS	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER

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