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SD101CWS-G PDF预览

SD101CWS-G

更新时间: 2024-11-29 01:14:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 85K
描述
For general purpose applications

SD101CWS-G 数据手册

 浏览型号SD101CWS-G的Datasheet PDF文件第2页浏览型号SD101CWS-G的Datasheet PDF文件第3页浏览型号SD101CWS-G的Datasheet PDF文件第4页 
SD101AWS-G, SD101BWS-G, SD101CWS-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• For general purpose applications  
• The SD101 series is a metal-on-silicon Schottky  
barrier device which is protected by a PN  
junction guardring  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast  
switching and low logic level applications  
MECHANICAL DATA  
• AEC-Q101 qualified available  
(part number on request)  
Case: SOD-323  
Weight: approx. 4.0 mg  
• Base P/N-G3 - green, commercial grade  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PARTS TABLE  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
SD101AWS-G  
SD101BWS-G  
SD101CWS-G  
SD101AWS-G3-08 or SD101AWS-G3-18  
SD101BWS-G3-08 or SD101BWS-G3-18  
SD101CWS-G3-08 or SD101CWS-G3-18  
Single diode  
SK  
SL  
Single diode  
Tape and reel  
Single diode  
SM  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
Ptot  
VALUE  
60  
UNIT  
V
SD101AWS-G  
SD101BWS-G  
SD101CWS-G  
Repetitive peak reverse voltage  
50  
V
40  
V
Power dissipation (infinite heatsink) (1)  
Forward continuous current  
150  
30  
mW  
mA  
A
IF  
Maximum single cycle surge  
10 μs square wave  
IFSM  
2
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
UNIT  
K/W  
°C  
Thermal resistance junction to ambient air (1)  
Junction temperature (1)  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-65 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient tamperature  
Rev. 1.2, 14-Oct-16  
Document Number: 85162  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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