SD101CW-TP-HF

更新时间： 2024-09-26 13:13:15

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2页	110K
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中文翻译

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数据手册

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SD101CW-TP-HF 数据手册

SD101A

THRU

SD101C

M C C

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Features

Low Reverse Recovery Time

Low Reverse Capacitance

Low Forward Voltage Drop

Small Signal

Schottky Diodes

l Guard Ring Construction for Transient Protection

Mechanical Data

l Case: DO-35, Glass

DO-35

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: Indicated by Cathode Band

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol SD101A SD101B SD101C

V^RRM

VRWM

V_R

60V

42V

50V

40V

28V

Cathode

Mark

V_R(RMS)

RMS Reverse Voltage

35V

Maximum sigle cycle surge 10us

square wave

IFSM

2.0A

Power Dissipation(Note 1)

400mW

Thermal Resistance, Junction to

Ambient

300K/W

125^oC

Junction Tmperature

T^j

Operation/Storage Temp. Range

TSTG

-55 to +150^oC

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Charateristic

Leakage Current

Symbol Max

Test Condition

VR=50V

DIMENSIONS

SD101A

SD101B

SD101C

200nA

INCHES

MIN

---

MIN

VR=40V

200nA

I^R

DIM

MAX

.166

.079

.020

---

MAX

4.2

NOTE

200nA V^R=30V

---

2.00

.52

---

Maximum Forward SD101A

Voltage Drop SD101B

SD101C

0.41V

0.4V

---

1.000

25.40

I_F=1mA

I_F=15mA

0.39V

V^F

SD101A

SD101B

SD101C

0.95V

0.9V

Junction Cap. SD101A

SD101B

2.0pF

2.1pF

2.2pF

C^j

t_rr

V^R=0V, f=1.0MHz

SD101C

I^F=IR=50mA, recover to

200mA/0.1IR

Reverse Recovery Time

1ns

Note: 1. Valid provided that electrodes are kept at ambient temperature

www.mccsemi.com

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