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SD101CWS-G3-18 PDF预览

SD101CWS-G3-18

更新时间: 2024-11-28 22:58:07
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 81K
描述
DIODE SCHOTTKY 50V 30MA SOD323

SD101CWS-G3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.07
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.39 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
参考标准:AEC-Q101最大重复峰值反向电压:40 V
最大反向恢复时间:0.001 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

SD101CWS-G3-18 数据手册

 浏览型号SD101CWS-G3-18的Datasheet PDF文件第2页浏览型号SD101CWS-G3-18的Datasheet PDF文件第3页浏览型号SD101CWS-G3-18的Datasheet PDF文件第4页 
SD101AWS-G, SD101BWS-G, SD101CWS-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• For general purpose applications  
• The SD101 series is a metal-on-silicon Schottky  
barrier device which is protected by a PN  
junction guardring  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast  
switching and low logic level applications  
DESIGN SUPPORT TOOLS click logo to get started  
• AEC-Q101 qualified available  
(part number on request)  
• Base P/N-G3 - green, commercial grade  
Models  
Available  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4.0 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
CIRCUIT  
CONFIGURATION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
SD101AWS-G  
SD101BWS-G  
SD101CWS-G  
SD101AWS-G3-08 or SD101AWS-G3-18  
SD101BWS-G3-08 or SD101BWS-G3-18  
SD101CWS-G3-08 or SD101CWS-G3-18  
Single  
SK  
SL  
Single  
Tape and reel  
Single  
SM  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
Ptot  
VALUE  
60  
UNIT  
V
SD101AWS-G  
SD101BWS-G  
SD101CWS-G  
Repetitive peak reverse voltage  
50  
V
40  
V
Power dissipation (infinite heatsink) (1)  
Forward continuous current  
150  
30  
mW  
mA  
A
IF  
Maximum single cycle surge  
10 μs square wave  
IFSM  
2
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
UNIT  
K/W  
°C  
Thermal resistance junction to ambient air (1)  
Junction temperature (1)  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-65 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.3, 01-Jun-17  
Document Number: 85162  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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