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SD101CWS-HG3-08 PDF预览

SD101CWS-HG3-08

更新时间: 2024-11-29 01:16:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 81K
描述
Small Signal Schottky Diodes

SD101CWS-HG3-08 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
二极管类型:RECTIFIER DIODEBase Number Matches:1

SD101CWS-HG3-08 数据手册

 浏览型号SD101CWS-HG3-08的Datasheet PDF文件第2页浏览型号SD101CWS-HG3-08的Datasheet PDF文件第3页浏览型号SD101CWS-HG3-08的Datasheet PDF文件第4页浏览型号SD101CWS-HG3-08的Datasheet PDF文件第5页 
SD103AWS-G, SD103BWS-G, SD103CWS-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• The SD103 series is a metal-on-silicon Schottky  
barrier device which is protected by a PN  
junction guardring  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing, and coupling diodes for fast  
switching and low logic level applications  
MECHANICAL DATA  
• Other applications are click suppression,  
efficient full wave bridges in telephone subsets,  
and blocking diodes in rechargeable low voltage  
battery systems  
Case: SOD-323  
Weight: approx. 4.0 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
• For general purpose applications  
• AEC-Q101 qualified available  
• Base P/N-G3 - green, commercial grade  
• Base P/N-HG3 - green, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
TYPE MARKING  
REMARKS  
SD103AWS-G3-08 or SD103AWS-G3-18  
SD103AWS-HG3-08 or SD103AWS-HG3-18  
SD103BWS-G3-08 or SD103BWS-G3-18  
SD103BWS-HG3-08 or SD103BWS-HG3-18  
SD103CWS-G3-08 or SD103CWS-G3-18  
SD101CWS-HG3-08 or SD101CWS-HG3-18  
SD103AWS-G  
Single diode  
Z6  
SD103BWS-G  
SD103CWS-G  
Single diode  
Single diode  
Z7  
Z8  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
IF  
VALUE  
40  
UNIT  
V
SD103AWS-G  
SD103BWS-G  
SD103CWS-G  
Repetitive peak reverse voltage  
30  
V
20  
V
Forward continuous current (1)  
Single cycle surge  
350  
2
mA  
A
10 μs square wave  
IFSM  
Power dissipation (1)  
Ptot  
200  
mW  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
500  
UNIT  
K/W  
°C  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-55 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.4, 21-Nov-13  
Document Number: 81142  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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