Datasheet > SD101BWS

SD101BWS

更新时间： 2024-11-29 09:31:27

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管
页数	文件大小	规格书
2页	365K
描述
SCHOTTKY DIODES

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中文翻译

获取价格

数据手册

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SD101BWS 数据手册

SD101AWS-SD101CWS

SCHOTTKY DIODES

SOD-323

FEATURES

MARKING: SD101AWS: S1

SD101BWS: S2

SD101CWS: S3

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Symbol

SD101AWS

SD101BWS

SD101CWS

Unit

Peak Repetitive Peak reverse voltage

Working Peak

V_RRM

V_RWM

V_R

DC Blocking

Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Repetitive Peak Forward Current @t<1.0s

2.0

I_FRM

@t=10μs

Power Dissipation

200

625

℃/W

℃

Thermal Resistance Junction to Ambient

Storage temperature

R_θJA

T_STG

-65~+125

Electrical Ratings @T_A=25℃

Parameter

Symb

Min.

Typ.

Max. Unit

Conditions

Reverse Breakdown Voltage

Forward voltage

SD101AWS

I_R=10μA

I_F=1.0mA

I_F=15mA

V_R=50V

V_R=40V

V_R=30V

SD101BWS V _(BR)R

SD101CWS

SD101AWS

SD101BWS

SD101CWS

SD101AWS

SD101BWS

SD101CWS

SD101AWS

SD101BWS

SD101CWS

0.41

0.40

0.39

1.00

0.95

0.90

V_F

Reverse current

I_RM

0.2

μA

Capacitance between terminals SD101AWS

2.0

2.1

2.2

SD101BWS

C_T

t_rr

V_R=0V,f=1.0MHz

SD101CWS

I_F=I_R=5mA

Irr=0.1XI_R,R_L=100Ω

Reverse Recovery Time

1．0

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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