Datasheet > SCT30N120

SCT30N120

更新时间： 2024-10-03 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	785K
描述
碳化硅功率MOSFET，1200 V、45 A、90 mOhm（典型值，TJ = 150 C），HiP247封装

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SCT30N120 数据手册

SCT30N120

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ

(typ., T_J= 150 °C) in an HiP247™ package

Datasheet - production data

Features



Very tight variation of on-resistance vs.

temperature



Very high operating junction temperature

capability (T_J= 200 °C)



Very fast and robust intrinsic body diode

Low capacitance

Applications



Solar inverters, UPS

Motor drives

High voltage DC-DC converters

Switch mode power supply

Figure 1: Internal schematic diagram

Description

This silicon carbide Power MOSFET is produced

exploiting the advanced, innovative properties of

wide bandgap materials. This results in

D(2, TAB)

unsurpassed on-resistance per unit area and

very good switching performance almost

independent of temperature. The outstanding

thermal properties of the SiC material, combined

with the device’s housing in the proprietary

HiP247™ package, allows designers to use an

industry standard outline with significantly

improved thermal capability. These features

render the device perfectly suitable for high-

efficiency and high power density applications.

G(1)

S(3)

AM01475v1_noZen

Table 1: Device summary

Order code

Marking

SCT30N120

Package

Packaging

SCT30N120

HiP247™

Tube

May 2017

DocID023109 Rev 11

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

中文翻译

下载PDF

与SCT30N120相关器件

型号	品牌	获取价格	描述	数据表
SCT30N120H	STMICROELECTRONICS	获取价格	Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
SCT3105KL	ROHM	获取价格	沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的导通电阻
SCT3105KLHR	ROHM	获取价格	沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的导通电阻
SCT3105KR	ROHM	获取价格	SCT3105KR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟
SCT3105KRHR (新产品)	ROHM	获取价格	AEC-Q101 qualified automotive grade product. SCT3105KRHR is an SiC (Silicon Carbide) trenc
SCT3105KW7	ROHM	获取价格	SCT3105KW7是1200V 23A的Nch SiC功率MOSFET。采用沟槽结构，降
SCT31110	CELDUC	获取价格	Three Phase Solid State Relays
SCT3120AL	ROHM	获取价格	SCT3120AL是650V 21A的Nch SiC功率MOSFET。
SCT3120ALHR	ROHM	获取价格	AEC-Q101 qualified automotive grade product. SCT3120ALHR is an SiC (Silicon Carbide) trenc
SCT3120AW7	ROHM	获取价格	SCT3120AW7是650V 21A的Nch SiC功率MOSFET。采用沟槽结构，降低