Datasheet > SCT3160KW7HR (新产品)

SCT3160KW7HR (新产品)

更新时间： 2023-09-03 20:39:49

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
17页	1411K
描述
AEC-Q101 qualified automotive grade product. SCT3160KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

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SCT3160KW7HR

Datasheet

Automotive Grade N-channel SiC power MOSFET

lOutline

TO-263-7L

V_DSS

1200V

160mΩ

17A

R_DS(on)(Typ.)

I_D

P_D

100W

lInner circuit

lFeatures

1) Qualified to AEC-Q101

2) Low on-resistance

3) Fast switching speed

4) Fast reverse recovery

5) Easy to parallel

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

6) Simple to drive

7) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Embossed tape

Packing

lApplication

・Automobile

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

330

Type

1000

SCT3160KW7

Marking

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified)

Parameter

Drain - Source Voltage

Symbol

V_DSS

Value

1200

Unit

T_c= 25°C

I_D

Continuous Drain current

T_c= 100°C

I_D

Pulsed Drain current (T_c= 25°C)

Gate - Source voltage (DC)

I_D,pulse

V_GSS

-4 to +22

-4 to +26

0 / +18

Gate - Source surge voltage (t_surge< 300ns)

Recommended drive voltage

V_{GSS_surge}

V_{GS_op}

T_vj

Virtual Junction temperature

175

°C

T_stg

Range of storage temperature

-55 to +175

www.rohm.com

TSZ22111・14・001

TSQ50252-SCT3160KW7HR

1.Nov.2022 - Rev.002

1/15

12 3 4 5 6 7...17

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