Datasheet > SCT30N120H

SCT30N120H

更新时间： 2023-12-20 18:44:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	461K
描述
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package

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SCT30N120H 数据手册

SCT30N120H

Datasheet

Silicon carbide Power MOSFET 1200 V, 42 A, 90 mΩ

(typ., T_J=150 °C), in an H²PAK-2 package

Features

TAB

•

Very tight variation of on-resistance vs temperature

Very high operating temperature capability (T_J= 175 °C)

Very fast and robust intrinsic body diode

Low capacitance

H PAK-2

Applications

•

Solar inverters, UPS

Motor drives

D(TAB)

High voltage DC-DC converters

Switch mode power supplies

Description

G(1)

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material allow designers to use an

industry-standard outline with significantly improved thermal capability. These

features render the device perfectly suitable for high-efficiency and high power

density applications.

S(2,3)

NCHG1DTABS23

Product status link

SCT30N120H

Product summary

Order code

SCT30N120H

Marking

Package

Packing

SCT30N120

H PAK-2

Tape and reel

DS11186 - Rev 3 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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