Datasheet > SCT3120AL

SCT3120AL

更新时间： 2024-10-03 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
17页	1359K
描述
SCT3120AL是650V 21A的Nch SiC功率MOSFET。

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中文翻译

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SCT3120AL 数据手册

SCT3120AL

Datasheet

N-channel SiC power MOSFET

lOutline

TO-247N

V_DSS

650V

120mΩ

21A

R_DS(on)(Typ.)

I_D

P_D

(3)

103W

(2)

(1)

lInner circuit

lFeatures

(1) Gate

(2) Drain

(3) Source

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

*Body Diode

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Tube

Packing

lApplication

・Solar inverters

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

Taping code

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

Type

C11

Marking

SCT3120AL

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified)

Parameter

Drain - Source Voltage

Symbol

V_DSS

Value

650

Unit

T_c= 25°C

I_D

Continuous Drain current

T_c= 100°C

I_D

Pulsed Drain current (T_c= 25°C)

Gate - Source voltage (DC)

I_D,pulse

V_GSS

-4 to +22

-4 to +26

0 / +18

175

Gate - Source surge voltage (t_surge< 300nsec)

Recommended drive voltage

V_{GSS_surge}

V_{GS_op}

T_vj

Virtual Junction temperature

°C

T_stg

Range of storage temperature

-55 to +175

°C

www.rohm.com

TSZ22111・14・001

TSQ50211-SCT3120AL

13.Nov.2022 - Rev.006

1/15

12 3 4 5 6 7...17

中文翻译

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