Datasheet > SCT070H120G3AG

SCT070H120G3AG

更新时间： 2023-12-20 18:46:01

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	391K
描述
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

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SCT070H120G3AG 数据手册

SCT070H120G3AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A

in an H²PAK-7 package

Features

TAB

DS(on)

typ.

Order code

SCT070H120G3AG

1200 V

63 mΩ

30 A

•

AEC-Q101 qualified

Very low R_DS(on)over the entire temperature range

High speed switching performances

H²PAK-7

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

Drain (TAB)

Applications

•

Main inverter (electric traction)

Gate (1)

DC/DC converter for EV/HEV

On board charger (OBC)

Driver

source (2)

Power

source (3, 4, 5, 6, 7)

Description

N-chG1DS2PS34567DTAB

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3^rdgeneration SiC MOSFET technology. The device

features a very low R_DS(on)over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

Product status link

SCT070H120G3AG

Product summary

Order code

SCT070H120G3AG

70H120G3AG

H²PAK-7

Marking

Package

Packing

Tape and reel

DS13987 - Rev 3 - April 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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