Datasheet > SCT070W120G3-4AG

SCT070W120G3-4AG

更新时间： 2023-12-20 18:44:36

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	229K
描述
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

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SCT070W120G3-4AG 数据手册

SCT070W120G3-4AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A

in an HiP247-4 package

Features

DS(on)

typ.

Order code

SCT070W120G3-4AG

1200 V

63 mΩ

30 A

•

AEC-Q101 qualified

Very low R_DS(on)over the entire temperature range

High speed switching performances

HiP247-4

Very fast and robust intrinsic body diode

Very high operating junction temperature capability (T_J= 200 °C)

Source sensing pin for increased efficiency

Drain(1, TAB)

Applications

Gate(4)

•

Main inverter (electric traction)

Driver

source(3)

DC/DC converter for EV/HEV

On board charger (OBC)

Power

source(2)

ND1TPS2DS3G4

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3^rdgeneration SiC MOSFET technology. The device

features a very low R_DS(on)over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

Product status link

SCT070W120G3-4AG

Product summary

Order code

Marking

SCT070W120G3-4AG

070W120G3AG

HiP247-4

Package

Packing

Tube

DS14263 - Rev 1 - March 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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