Datasheet > SCP6C60

SCP6C60

更新时间： 2024-11-18 03:33:11

品牌	Logo	应用领域
SEMIWELL		可控硅整流器
页数	文件大小	规格书
5页	676K
描述
Silicon Controlled Rectifiers

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SCP6C60 数据手册

SemiWell Semiconductor

SCP6C60

Silicon Controlled Rectifiers

Symbol

3. Gate

○

Features

2. Anode

1. Cathode

◆ Repetitive Peak Off-State Voltage : 600V

◆ R.M.S On-State Current ( I

= 6 A )

T(RMS)

◆ Low On-State Voltage (1.4V(Typ.)@ I

◆ Non-isolated Type

)

TO-220

General Description

Standard gate triggering SCR is suitable for the application where

requiring high bidirectional blocking voltage capability and also

suitable for over voltage protection ,motor control circuit in power

tool, inrush current limit circuit and heating control system.

Absolute Maximum Ratings ( T_J= 25°C unless otherwise specified )

Symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

Average On-State Current

R.M.S On-State Current

Condition

Ratings

Units

600

3.8

Half Sine Wave : T_C= 109 °C

180° Conduction Angle

I_T(AV)

I_T(RMS)

1/2 Cycle, 60Hz, Sine Wave

Non-Repetitive

I_TSM

I²t

Surge On-State Current

I²t for Fusing

A²s

t = 8.3ms

di/dt

P_GM

P_G(AV)

I_FGM

V_RGM

T_J

Critical rate of rise of on-state current

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Forward Peak Gate Current

Reverse Peak Gate Voltage

Operating Junction Temperature

Storage Temperature

A/㎲

0.5

5.0

- 40 ~ 125

- 40 ~ 150

°C

T_STG

Information offers: http://www.kkg.com.cn

Aug, 2003. Rev. 1

1/5

12 3 4 5

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