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SC202R100A5B PDF预览

SC202R100A5B

更新时间: 2024-11-05 19:05:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 130K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, WAFER

SC202R100A5B 技术参数

生命周期:Active零件包装代码:WAFER
包装说明:WAFERReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.76应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUUC-N1元件数量:1
相数:1端子数量:1
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

SC202R100A5B 数据手册

 浏览型号SC202R100A5B的Datasheet PDF文件第2页浏览型号SC202R100A5B的Datasheet PDF文件第3页浏览型号SC202R100A5B的Datasheet PDF文件第4页浏览型号SC202R100A5B的Datasheet PDF文件第5页 
Bulletin I0508J rev. B 05/01  
SC202.....5.. Series  
SCHOTTKY DIE 200 x 200 mils (Monolithic Dual)  
0.25 ± 0.01  
(10 ± 0.4)  
a
NOTES:  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).  
2. CONTROLLING DIMENSION: (MILS).  
Anode  
3. DIMENSIONS AND TOLERANCES:  
a = 5.08 + 0, - 0.01  
(200 + 0, - 0.4)  
D
Anode  
b = 5.08 + 0, - 0.01  
(200 + 0, - 0.4)  
c = 4.92 + 0, - 0.01  
(193 + 0, - 0.4)  
c
d = 2.43 + 0, - 0.01  
(95 + 0, - 0.4)  
Ø
Ø = 1 ± 0.15  
(40 ± 6)  
40 (157)  
4. LETTER DESIGNATION:  
A = Anode (Top Metal)  
C = Cathode (Back Metal)  
Wafer flat alligned with  
side b of the die  
D = Reject Ink Dot (only on non-conforming dies)  
5. SAWING:  
Recommended Blade  
SEMITEC S1025 QS00 Blade  
Sawing Street  
0.05 + 0, - 0.005  
(2 + 0, - 0.2)  
NOT TO SCALE  
Document Number: 93870  
www.vishay.com  
1

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