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SC10120M2 PDF预览

SC10120M2

更新时间: 2024-11-06 02:51:27
品牌 Logo 应用领域
晶恒 - JINGHENG /
页数 文件大小 规格书
6页 897K
描述
SILICON CARBIDE SCHOTTKY DIODE

SC10120M2 数据手册

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R
D2 SC10120M2  
SC10120 SC10120F SC10120  
SILICON CARBIDE SCHOTTKY DIODE  
Reverse Voltage - 1200 Volts  
S
E M I C O N D U C T O R  
Forward Current - 10Amperes  
DESCRIPTION  
SiC Schottky Diode has no switching loss,provides improved  
system efficiency against Si diodes by utilizing new semiconductor  
material-Silicon Carbide,enables higher operating frequency,  
and helps increasing power density and reduction of system  
size /cost.Its high reliability ensures robust operation during  
surge or over_voltage conditions.  
TO-220AC  
ITO-220AC  
Sc10120  
SC10120F  
JF  
JF  
SC10120  
SC10120F  
FEATURES  
Max Junction Temperature 175°C  
High Surge Current Capacity  
Positive Temperature Coefficient  
Ease of Paralleling  
No Reverse Recovery/No Forward Recovery  
MECHANICAL DATA  
TO-263AC  
TO-252  
SC10120D2  
SC10120M2  
Case: JEDEC TO-220AC/ITO-220AC/TO-263AC/TO-252AC  
Molding compound meets UL94V-0 flammability rating  
Terminals: Lead solderable per J-STD-002 and JESD22-B102  
Polarity: As marked  
JF  
10120M2  
Mounting Torque: 10 in-Ibs maximum  
C
S
2
1
TYPICAL APPLICATIONS  
General Purpose  
SMPS, Solar inverter, UPS  
Power Switching Circuits  
KEY PERFORMANCE AND PACKAGE PARAMETERS  
Type  
VDC  
Qc  
Tj,max  
Package  
IF  
1200V  
1200V  
1200V  
1200V  
10A  
10A  
10A  
10A  
30nC  
30nC  
30nC  
30nC  
175℃  
175℃  
175℃  
175℃  
TO-220AC  
ITO-220AC  
TO-263AC  
TO-252AC  
Sc10120  
SC10120F  
SC10120D2  
SC10120M2  
6-1  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  

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