Datasheet > SBR3L100B

SBR3L100B

更新时间： 2024-11-15 02:50:39

品牌	Logo	应用领域
未来芯 - FUTUREWAFER		/
页数	文件大小	规格书
16页	2083K
描述
Surface Mount Schottky Barrier Rectifier

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SBR3L100B 数据手册

SBR3L100 Family

Surface Mount Schottky Barrier Rectifier

1. Synopsis

1-1. General Description

These Devices Employ The Schottky Barrier Principle in a

Metal−to−Silicon Power Rectifier. Features Epitaxial

Construction With Oxide Passivation and Metal Overlay

Contact. Ideally Suited For Low Voltage, High Frequency

Switching Power Supplies; Free Wheeling Diodes and

Polarity Protection Diodes.

SOD123FL

1-2. Feature List

SOD123HE

●

High Surge Current Capability

Low Power Loss, High Efficiency

Low Forward Voltage

Ultra Low Leakage Current

Soft, Fast Switching Capability

High Operating Junction Temperature

SMAJ

SMAF

1-3. Applications

●

For Use In Low Voltage High Frequency

Inverters, Freewheeling, DC/DC Converters,

and Polarity Protection Applications.

1-4. Benefits

SMBJ

●

Essentially No Switching Losses

Higher Efficiency

Reduction Of Heat Sink Requirements

Parallel Devices Without Thermal Runaway

Higher System Reliability Due To Lower Operating Temperatures

1-5. Mechanical Characteristics

SMBF

●

Molded JEDEC Package:

- SOD123FL / SOD123HE

- SMAJ / SMAF

Cathode

Anode

- SMBJ / SMBF

●

Packing: Tape and Reel

Flammability rating UL 94V-0

Halogen Free

JEDEC MSL Classification: Level 1

www.futurewafer.com.tw

FQE-001-04

Document No.: F41810S

13-DEC-2021 V 2.1

1/16

12 3 4 5 6 7...16

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