Datasheet > SBR3045R_11

SBR3045R_11

更新时间： 2024-11-25 09:34:11

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	244K
描述
Voltage 45 V 30.0 Amp Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SBR3045R_11 数据手册

SBR3045R

Voltage 45 V

30.0 Amp Schottky Barrier Rectifiers

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-220

FEATURES



Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

MECHANICAL DATA



Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

Polarity: As Marked



Mounting position: Any

Weight: 1.93 grams (approximate)

Millimeter

REF.

Min.

Max.

16.51

10.67

14.75

4.90

1.45

2.92

0.76

4.5

Min.

0.7

Max.

1.78

1.02

2.69

3.43

4.09

9.65

1.45

14.22

9.65

12.50

3.56

0.51

2.03

0.31

3.5

0.38

2.39

2.50

3.10

8.38

0.89

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Symbol

Part Number

Unit

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

V_RRM

V_RSM

V_DC

Maximum DC Blocking Voltage

Per Leg

Maximum Average Forward Rectified Current

I_F

Per Device

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

I_FSM

180

I_F= 15 A, T_A= 25°C, per leg

0.57

0.52

Maximum Instantaneous

Forward Voltage

V_F

I_F= 15 A, T_A= 125°C, per leg

T_A= 25°C

0.5

Maximum DC Reverse Current

at Rated DC Blocking Voltage ³

I_R

T_A= 100°C

Typical Junction Capacitance ¹

Typical Thermal Resistance ²

C_J

R_θJC

dv / dt

T_J

2400

°C / W

V / μS

°C

Voltage Rate Of Chance (Rated VR)

Operating Temperature Range T_J

10000

-50~150

-65~175

Storage Temperature Range T_STG

Notes:

T_STG

°C

1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.

2. Thermal Resistance Junction to Case.

Pulse Test: Pulse Width≦300μS, Duty Cycle≦2%

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Sep-2011 Rev. B

Page 1 of 2

中文翻译

下载PDF

与SBR3045R_11相关器件

型号	品牌	获取价格	描述	数据表
SBR3045RE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 45V V(RRM), Silicon, DO-203AA, DO-4, 1
SBR3045RF	SECOS	获取价格	30.0AMP Schottky Barrier Rectifiers
SBR3045SCTB	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2
SBR3045SCTB-13	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2
SBR3045SCTB-13-G	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, GREEN, PLASTIC, D2PAK-3
SBR3045SCTB-G	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, GREEN, PLASTIC, D2PAK-3
SBR3050	MICROSEMI	获取价格	30 Amp Schottky Rectifier
SBR3050E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1
SBR3050R	MICROSEMI	获取价格	30 Amp Schottky Rectifier
SBR3050RE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1

与SBR3045R_11相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

SBR3045R_11

SBR3045R_11 数据手册

与SBR3045R_11相关器件

与SBR3045R_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SBR3045R_11

SBR3045R_11 数据手册

与SBR3045R_11相关器件

与SBR3045R_11相关文章

您还可以找

您在本页遇到什么问题？