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SBR30200CTI PDF预览

SBR30200CTI

更新时间: 2024-11-25 20:52:39
品牌 Logo 应用领域
美台 - DIODES 功效二极管
页数 文件大小 规格书
3页 72K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 200V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

SBR30200CTI 技术参数

生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

SBR30200CTI 数据手册

 浏览型号SBR30200CTI的Datasheet PDF文件第2页浏览型号SBR30200CTI的Datasheet PDF文件第3页 
SBR30200CT  
SBR30200CTF  
SBR30200CTI  
SBR30200CTB  
Using state-of-the-art SBR IC process technology,  
the following features are made possible in a single device:  
Major ratings and characteristics  
Device optimized for low forward voltage drop to  
maximize efficiency in Power Supply applications  
Characteristics  
F(AV) Rectangular Waveform  
Values  
Units  
A
I
30  
VRRM  
200  
V
VF@15A, Tj=125OC  
0.72  
V, typ  
OC  
Tj (operating/storage)  
-65 to 175  
ELECTRICAL:  
MECHANICAL:  
* Low Forward Voltage Drop  
* Reliable High Temperature Operation  
* Super Barrier Design  
* Molded Plastic TO-220AB, TO-262, TO-263, and  
ITO-220 packages  
* Softest, fast switching capability  
* 175OC Operating Junction Temperature  
Case Styles  
SBR30200CT  
SBR30200CTF  
SBR30200CTI  
SBR30200CTB  
2
2
2
2
Common  
Common  
Cathode  
Common  
Cathode  
Common  
3
3
Cathode  
3
Anode  
Anode1  
3
Anode 1  
Anode1  
Anode1 Cathode  
Anode  
Anode  
Anode  
TO-220AB  
ITO-220  
TO-262  
TO-263  
________________________________________________________________________________________________  
www.apdsemi.com Version 2.0 - April 2006  
1

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