Datasheet > SBR30200RF_11

SBR30200RF_11

更新时间： 2024-11-21 09:34:11

品牌	Logo	应用领域
SECOS		肖特基二极管
页数	文件大小	规格书
2页	361K
描述
30 Amp Schottky Barrier Rectifiers

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中文翻译

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SBR30200RF_11 数据手册

SBR30200RF

Voltage 200 V

30 Amp Schottky Barrier Rectifiers

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

FEATURES

ITO-220



Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

MECHANICAL DATA



Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

Polarity: As Marked



Mounting position: Any

Weight: 2.24 grams (approximate)

Millimeter

Min.

Millimeter

REF.

Max.

Min.

Max.

3.80

1.50

0.90

2.74

2.90

3.4

14.60

9.50

12.60

4.30

2.50

2.40

0.30

15.60

10.50

13.70

4.70

3.2

3.00

0.90

0.50

2.34

2.40

 3.0

2.80

0.70

PIN 1

PIN 3

CASE

PIN 2

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Unit

Symbol

Rating

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

V_RRM

V_RSM

V_DC

200

Maximum DC Blocking Voltage

Per Leg

Maximum Average Forward Rectified Current

I_F

Per Device

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

I_FSM

180

Maximum Instantaneous Forward

Voltage

I_F=15A, T_A=25°C, per leg

I_F=15A, T_A=125°C, per leg

0.92

0.8

V_F

Maximum DC Reverse Current at Rated

DC Blocking Voltage ⁴

T_A= 25°C

0.02

I_R

T_A= 100°C

Typical Junction Capacitance ¹

Typical Thermal Resistance ²

Typical Thermal Resistance ³

Voltage Rate Of Chance (Rated V_R)

Operating Temperature Range T_J

C_J

350

°C / W

V / μs

°C

R_

dv / dt

T_J

10000

-50~150

-65~175

Storage Temperature Range T_STG

Notes:

T_STG

°C

1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.

2. Thermal Resistance Junction to Case.

3. Thermal Resistance Junction to Ambient.

4. Pulse test: 300μs pulse width, 1% duty cycle.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Apr-2011 Rev. C

Page 1 of 2

中文翻译

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与SBR30200RF_11相关器件

型号	品牌	获取价格	描述	数据表
SBR30250CT	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 250V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-
SBR30250CTB	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 250V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263,
SBR30250CTF	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 250V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220
SBR30250CTI	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 250V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262,
SBR30300_15	DIODES	获取价格	30A SBRÂ® SUPER BARRIER RECTIFIER
SBR30300CT	DIODES	获取价格	30A SBR Super Barrier Rectifier
SBR30300CT	GOOD-ARK	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-220AB,
SBR30300CTB	DIODES	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263,
SBR30300CTFP	DIODES	获取价格	30A SBR Super Barrier Rectifier
SBR30300CTFP-G	DIODES	获取价格	30A SBRÂ® SUPER BARRIER RECTIFIER

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