Datasheet > SBR1U200P1

SBR1U200P1

更新时间： 2024-10-14 06:10:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	69K
描述
1.0A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER PowerDI 123

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SBR1U200P1 数据手册

SBR1U200P1

1.0A SBR^®

SURFACE MOUNT SUPER BARRIER RECTIFIER

PowerDI^®123

Features

Mechanical Data

•

Ultra Low Forward Voltage Drop

Low Leakage Current

Superior Reverse Avalanche Capability

Excellent High Temperature Stability

Patented Interlocking Clip Design for High Surge Current

Capacity

•

Case: PowerDI^®123

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Polarity Indicator: Cathode Band

Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

•

Patented Super Barrier Rectifier Technology

Soft, Fast Switching Capability

150ºC Operating Junction Temperature

Lead Free Finish, RoHS Compliant (Note 1)

“Green” Molding Compound (No Br, Sb)

•

Ordering Information: See Page 3

Weight: 0.018 grams (approximate)

Top View

Maximum Ratings @T_A= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

V_RRM

V_RWM

V_RM

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

200

Average Rectified Output Current (See Figure 1)

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

1.0

I_O

I_FSM

Thermal Characteristics

Characteristic

Symbol

Value

217

Unit

ºC/W

ºC

Maximum Thermal Resistance Junction to Ambient (Note 2)

Maximum Thermal Resistance Junction to Ambient (Note 3)

Operating and Storage Temperature Range

R_θ

138

-65 to +175

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Forward Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

I_F= 1.0A, T_J= 25ºC

I_F= 1.0A, T_J= 125ºC

V_R= 200V, T_J= 25ºC

I_F= 0.5A, I_R= 1A,

0.75

0.60

0.82

0.68

V_F

I_R

Reverse Current (Note 4)

Reverse Recovery Time

μA

t_rr

_RR= 0.25A,

Notes:

1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.

2. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

3. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

4. Short duration pulse test used to minimize self-heating effect.

SBR and PowerDI are registered trademarks of Diodes Incorporated.

1 of 4

www.diodes.com

August 2010

SBR1U200P1

Document number: DS32093 Rev. 2 - 2

12 3 4

中文翻译

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