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SBQ1045 PDF预览

SBQ1045

更新时间: 2024-11-27 09:34:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管IOT
页数 文件大小 规格书
2页 137K
描述
Schottky Barrier Rectifier Diodes – Single Diode

SBQ1045 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-251AA包装说明:R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:45 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBQ1045 数据手册

 浏览型号SBQ1045的Datasheet PDF文件第2页 
SBQ1020 ... SBQ1045  
Version 2011-10-18  
SBQ1020 ... SBQ1045  
Schottky Barrier Rectifier Diodes – Single Diode  
Schottky-Barrier-Gleichrichterdioden – Einzeldiode  
Nominal current  
Nennstrom  
10 A  
6.4±0.2  
5.3±0.2  
2.3  
0.5  
4
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
20...45 V  
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
~ TO-251  
I-PAK  
3
1
2
0.8±0.1  
Weight approx. – Gewicht ca.  
1.8 g  
1 2 3  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
0.75±0.15  
4
2 x 2.28  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive / Surge peak reverse voltage  
Periodische- / Spitzen-Sperrspannung  
Forward voltage  
Durchlass-Spannung  
VF [V] Tj = 125°C  
Forward voltage  
Durchlass-Spannung  
VF [V] Tj = 25°C  
VRRM [V] / VRSM [V]  
IF = 5 A  
typ. 0.36  
typ. 0.36  
typ. 0.36  
typ. 0.36  
IF = 5 A  
< 0.51  
< 0.51  
< 0.51  
< 0.51  
IF = 10 A  
< 0.55  
< 0.55  
< 0.55  
< 0.55  
SBQ1020  
SBQ1030  
SBQ1040  
SBQ1045  
20  
30  
40  
45  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
IFAV  
IFRM  
IFSM  
i2t  
10 A  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
30 A 1)  
135/150 A  
80 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
1
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 

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