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SBLF25L30CTHE3_A/P PDF预览

SBLF25L30CTHE3_A/P

更新时间: 2024-10-27 13:13:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 157K
描述
Rectifier Diode,

SBLF25L30CTHE3_A/P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ITO-220AB, 3 PINReach Compliance Code:unknown
Factory Lead Time:10 weeks风险等级:5.72
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.49 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:180 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:12.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:AEC-Q101最大重复峰值反向电压:30 V
最大反向电流:0.9 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SBLF25L30CTHE3_A/P 数据手册

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SBL(F,B)25L20CT thru SBL(F,B)25L30CT  
Vishay General Semiconductor  
Dual Low V Common Cathode Schottky Rectifier  
F
FEATURES  
ITO-220AB  
TO-220AB  
• Low power loss, high efficiency  
• Very low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF  
3
3
2
2
1
maximum peak of 245 °C (for TO-263AB package)  
1
SBL25LxxCT  
SBLF25LxxCT  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
PIN 3  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-263AB  
K
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency inverters,  
switching mode power supplies, freewheeling diodes,  
OR-ing diodes, dc-to-dc converters and polarity  
protection application.  
1
SBLB25LxxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
12.5 A x 2  
20 V to 30 V  
180 A  
VF  
0.39 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
SBL25L20CT  
SBL25L25CT  
SBL25L30CT  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
20  
25  
30  
V
Maximum average forward rectified  
current at TC = 95 °C  
total device  
per diode  
25  
12.5  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
TJ, TSTG  
VAC  
180  
- 55 to + 150  
1500  
A
°C  
V
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Document Number: 88731  
Revision: 08-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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