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SBLB2030CTHE3 PDF预览

SBLB2030CTHE3

更新时间： 2024-11-30 01:16:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 144K
描述
Dual Common Cathode Schottky Rectifier

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中文翻译

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SBLB2030CTHE3 数据手册

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SBL20x0CT, SBLF20x0CT, SBLB20x0CT,  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
1
SBL20x0CT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
SBLF20x0CT  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
PIN 3  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
SBLB20x0CT  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
IF(AV)  
2 x 10 A  
VRRM  
30 V to 40 V  
250 A  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF  
0.60 V  
TJ max.  
Package  
Diode variations  
150 °C  
TO-220AB, ITO-220AB, TO-263AB  
Common cathode  
meets JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SBL2030CT  
SBL2040CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
30  
21  
30  
40  
28  
40  
V
total device  
per diode  
20  
10  
Maximum average forward rectified current  
IF(AV)  
IFSM  
at TC = 105 °C  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
250  
1.0  
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz  
Operating junction and storage temperature range  
IRRM  
TJ, TSTG  
VAC  
- 55 to + 150  
1500  
°C  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Revision: 12-Jun-13  
Document Number: 88730  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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