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SBLB2040CT-HE3/81 PDF预览

SBLB2040CT-HE3/81

更新时间: 2024-11-29 14:44:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 143K
描述
DIODE 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

SBLB2040CT-HE3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

SBLB2040CT-HE3/81 数据手册

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SBL(F,B)2030CT & SBL(F,B)2040CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
SBL20xxCT  
SBLF20xxCT  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 3  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters and polarity protection application.  
SBLB20xxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A x 2  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
30 V, 40 V  
250 A  
VF  
0.60 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
SBL2030CT  
SBL2040CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
30  
21  
30  
40  
28  
40  
V
V
V
total device  
per diode  
20  
10  
Maximum average forward rectified current at TC = 105 °C  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
250  
1.0  
Peak repetitive reverse surge current per diode at tp = 2.0 µs, 1 kHz  
Operating junction and storage temperature range  
IRRM  
TJ, TSTG  
VAC  
A
°C  
V
- 55 to + 150  
1500  
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Document Number: 88730  
Revision: 25-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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