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SBE802 PDF预览

SBE802

更新时间: 2024-09-26 22:22:23
品牌 Logo 应用领域
三洋 - SANYO 测试
页数 文件大小 规格书
3页 29K
描述
100V, 400mA Rectifier

SBE802 技术参数

生命周期:Transferred包装说明:R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.6其他特性:HIGH RELIABILITY, LOW NOISE
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JESD-30 代码:R-PDSO-G5元件数量:2
端子数量:5最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:50 µA
最大反向恢复时间:0.01 µs反向测试电压:45 V
子类别:Other Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

SBE802 数据手册

 浏览型号SBE802的Datasheet PDF文件第2页浏览型号SBE802的Datasheet PDF文件第3页 
Ordering number : ENN6293A  
Schottky Barrier Diode  
SBE802  
100V, 400mA Rectifier  
Applications  
Package Dimensions  
unit : mm  
1294  
High frequency rectification (switching regulators,  
converters, and choppers).  
[SBE802]  
2.9  
4
0.15  
Features  
5
3
2
Low forward voltage (V max=0.7V).  
F
0.05  
Fast reverse recovery time (t max=10ns).  
rr  
Low switching noise.  
Low leakage current and high reliability due to highly  
reliable planar structure.  
1
0.95  
0.4  
1 : Cathode  
2 : Cathode  
3 : Anode  
4 : No Contact  
5 : Anode  
SANYO : CPH5  
0.4  
Specifications  
Absolute Maximum Ratings at Ta=25°C (Value per element)  
Parameter  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
100  
100  
400  
5
RRM  
RSM  
V
V
I
O
mA  
A
Surge Forward Current  
I
50Hz sine wave, 1 cycle  
FSM  
Tj  
Junction Temperature  
--55 to +125  
--55 to +125  
°C  
°C  
Storage Temperature  
Tstg  
Electrical Characteristics at Ta=25°C (Value per element)  
Ratings  
typ  
Parameter  
Reverse Voltage  
Symbol  
Conditions  
Unit  
min  
100  
max  
V
I
=200µA  
V
V
R
R
I =200mA  
F
0.5  
0.55  
0.7  
50  
Forward Voltage  
V
F
I =400mA  
F
V
Reverse Current  
I
R
V
=45V  
R
µA  
pF  
ns  
Interterminal Capacitance  
Reverse Recovery Time  
Thermal Resistance  
Marking : SA  
C
V
=10V, f=1MHz  
R
20  
t
rr  
I =I =100mA, See specified Test Circuit.  
Mounted on a ceramic board (600mm20.8mm)  
10  
F R  
Rth(j-a)  
110  
°C/W  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
72600 GI IM / 80699 GI (KT)  
No.6293-1/3  

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