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SBE803 PDF预览

SBE803

更新时间: 2024-09-26 22:22:23
品牌 Logo 应用领域
三洋 - SANYO 二极管测试光电二极管
页数 文件大小 规格书
3页 39K
描述
90V, 200mA Rectifier

SBE803 技术参数

生命周期:Transferred包装说明:R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.59Is Samacsys:N
其他特性:HIGH RELIABILITY, LOW LEAKAGE CURRENT配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:90 V
最大反向电流:50 µA最大反向恢复时间:0.01 µs
反向测试电压:45 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

SBE803 数据手册

 浏览型号SBE803的Datasheet PDF文件第2页浏览型号SBE803的Datasheet PDF文件第3页 
Ordering number:ENN6331  
Schottky Barrier Diode  
SBE803  
90V, 200mA Rectifier  
Applications  
Package Dimensions  
unit:mm  
· High frequency rectification (switching regulators,  
converters, choppers).  
1294  
[SBE803]  
2.9  
0.15  
Features  
5
4
3
2
· Low forward voltage (V max=0.7V).  
F
· Fast reverse recovery time (t max=10ns).  
· Low switching noise.  
· Low leakage current and high reliability due to  
highly reliable planar structure.  
0.05  
rr  
1
0.95  
0.4  
0.4  
1 : Cathode  
2 : Cathode  
3 : Anode  
4 : No Contact  
5 : Anode  
SANYO : CPH5  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C (Value per element)  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
90  
95  
V
V
RRM  
V
RSM  
I
200  
mA  
O
Surge Forward Current  
Junction Temperature  
Storage Temperature  
I
50Hz sine wave, 1 cycle  
5
–55 to +125  
–55 to +125  
A
˚C  
˚C  
FSM  
Tj  
Tstg  
Electrical Characteristics at Ta = 25˚C (Value per element)  
Ratings  
typ  
Parameter  
Symbol  
Conditons  
Unit  
min  
90  
max  
Reverse Voltage  
Forward Voltage  
Reverse Current  
V
R
V
F
I
=200µA  
V
V
R
I =200mA  
0.7  
F
I
V
V
=45V  
50  
µA  
pF  
R
R
R
Interterminal Capacitance  
Reverse Recovery Time  
C
=10V, f=1MHz  
10  
t
I =I =100mA, See specified Test Circuit.  
10  
ns  
rr  
F R  
Mounted on a ceramic board (600mm2×0.8mm)  
˚C/W  
Thermal Resistance  
Rth(j-a)  
110  
Marking : SB  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O0899GI (KT) No.6331–1/3  

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