JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diode
SCHOTTKY BARRIER RECTIFIER
SBDB3045TCTB
TO-263-2L
MAIN CHARACTERISTICS
IO
30(2×15)A
45 V
1. ANODE
2. CATHODE
3. ANODE
VRRM
Tj
150 ℃
2
VF(typ)
0.44V (@Ta=125℃)
1
3
FEATURES
1
2
Low Power Loss,High Efficiency
3
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
MARKING
SBDB3045TCTB = Device code
SBD
B3045TCTB
XXXX
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
MAXIMUM RATINGS ( Ta=25
℃
unless otherwise noted )
Parameter
Symbol
Value
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
V
45
RMS reverse voltage
31.5
30
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
8.3ms half sine wave)
IFSM
RΘJC
RΘJA
Tj
280
2.0
A
℃/W
℃/W
℃
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃
62.5
150
Storage temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
V
IR=1.0mA
45
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀX$
150
40
23
Tj =25℃
V
IR
R=45V
Reverse current
Forward voltage
mA
V
Tj =125℃
Tj =25℃
0.44
IF=10A
IF=15A
V
Tj =125℃
Tj =25℃
Tj =125℃
0.37
0.48
VF
V
V
0.55
0.44
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.jscj-elec.com
1
Rev. - 1.0