Datasheet > SBDF20H200CTB

SBDF20H200CTB

更新时间： 2023-12-06 20:02:04

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1979K
描述
TO-220F-B

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数据手册

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SBDF20H200CTB 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L/TO-220F-B Plastic-Encapsulate Diode

SCHOTTKY BARRIER RECTIFIER

SBD20H200CTB、SBDF20H200CTB

MAIN CHARACTERISTICS

I_O

20(10×2)A

200 V

V_RRM

T_j

TO-220-3L

TO-220F-B

175 ℃

0.67V （@Tj=150℃）

V_F(typ)

FEATURES

 Low Power Loss,High Efficiency

 Guard Ring Die Construction for Transient Protection

 High Current Capability and Low Forward Voltage Drop

MARKING

1. ANODE

2. CATHODE

3. ANODE

SBD(F)20H200CTB = Device code

SBD

F20H200CTB

Solid dot = Green molding compound device

if none, the normal device

XXXX = Code

SBD

XXXX

20H200CTB

XXXX

MAXIMUM RATINGS ( T_a=25℃℃ unless otherwise noted )

SBD

Symbol

Parameter

Peak repetitive reverse voltage

Unit

F20H200CTB

20H200CTB

V_RRM

V_RWM

V_R

Working peak reverse voltage

DC blocking voltage

200

RMS reverse voltage

V_R(RMS)

I_O

140

Average rectified output current

Non-Repetitive peak forward surge current (

8.3ms half sine wave)

I_FSM

200

R_ΘJc

Thermal resistance from junction to case ,Tc=25

Thermal resistance from junction to ambient

Junction temperature

℃/W

℃

2.0

3.0

R_ΘJA

T_j

℃/W

℃

175

Storage temperature

-55~+175

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25

℃

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage

I_R=0.1mA

V_(BR)

200

Tj =25℃

500

I_R

Reverse current

Forward voltage

_R=200V

0.6

Tj =150℃

Tj =25℃

Tj =150℃

0.78

_IF=5A

0.60

0.84

V_F

Tj =25℃

0.90

_IF=10A

Tj =150℃

0.67

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 1.1

12 3 4

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