JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L/TO-220F-B Plastic-Encapsulate Diode
SBD30120TCTB、SBDF30120TCTB SCHOTTKY BARRIER RECTIFIER
MAIN CHARACTERISTICS
IO
30(2×15)A
120 V
VRRM
Tj
TO-220-3L
TO-220F-B
150 ℃
VF(typ)
0.68V (@Tj=125℃)
FEATURES
Low Power Loss,High Efficiency
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
1
2
MARKING
3
1
2
3
1. ANODE
2. CATHODE
3. ANODE
1
3
SBD(F)30120TCTB = Device code
2
SBD
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
SBD
30120TCTB
XXXX
F30120TCTB
XXXX
MAXIMUM RATINGS ( Ta=25℃℃ unless otherwise noted )
SBD
F30120TCTB
Symbol
Parameter
Peak repetitive reverse voltage
Unit
30120TCTB
VRRM
VRWM
VR
V
Working peak reverse voltage
DC blocking voltage
120
RMS reverse voltage
84
30
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
8.3ms half sine wave)
IFSM
200
A
RΘJc
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃/W
℃
2.0
3.0
RΘJA
Tj
℃/W
℃
62.5
150
Storage temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
IR=0.1mA
120
V
uA
mA
V
10
10
Tj =25℃
100
IR
Reverse current
Forward voltage
V
R=120V
Tj =125℃
Tj =25℃
Tj =125℃
0.69
IF=10A
V
V
V
0.61
0.83
VF
Tj =25℃
0.89
IF=15A
Tj =125℃
0.68
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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Rev. - 1.0
1