Datasheet > SBDF40H100CTB

SBDF40H100CTB

更新时间： 2023-12-06 20:03:38

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2416K
描述
TO-220F-B

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中文翻译

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数据手册

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SBDF40H100CTB 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L/TO-220F-B Plastic-Encapsulate Diode

SCHOTTKY BARRIER RECTIFIER

SBD40H100CTB、SBDF40H100CTB

MAIN CHARACTERISTICS

40 (20×2) A

I_O

V_RRM

T_j

100 V

TO-220-3L

TO-220F-B

175 ℃

V_F(typ)

0.66V (@Tj=150℃)

FEATURES

 Low Power Loss,High Efficiency

 Guard Ring Die Construction for Transient Protection

 High Current Capability and Low Forward Voltage Drop

MARKING

1. ANODE

2. CATHODE

3. ANODE

SBD(F)40H100CTB = Device code

SBD

F40H100CTB

Solid dot = Green molding compound device

if none, the normal device

XXXX = Code

SBD

XXXX

40H100CTB

XXXX

MAXIMUM RATINGS ( T_a=25℃℃ unless otherwise noted )

SBD

Symbol

Parameter

Peak repetitive reverse voltage

Unit

F40H100CTB

40H100CTB

V_RRM

V_RWM

V_R

Working peak reverse voltage

DC blocking voltage

100

RMS reverse voltage

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current (

8.3ms half sine wave)

I_FSM

300

R_ΘJc

Thermal resistance from junction to case ,Tc=25

Thermal resistance from junction to ambient

Junction temperature

℃/W

℃

2.0

3.0

R_ΘJA

T_j

℃/W

℃

175

Storage temperature

-55~+175

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25

℃

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage

I_R=0.1mA

V_(BR)

100

0.13

0.80

0.72

Tj =25℃

1.0

I_R

Reverse current

Forward voltage

_R=100V

Tj =150℃

Tj =25℃

Tj =150℃

_IF=10A

0.58

0.80

0.66

V_F

Tj =25℃

0.85

_IF=20A

Tj =150℃

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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