JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diode
SCHOTTKY BARRIER RECTIFIER
SBDB30H200CTB
MAIN CHARACTERISTICS
IO
30(2×15)A
200 V
TO-263-2L
VRRM
Tj
175 ℃
VF(typ)
0.69V (@Ta=150℃)
1. ANODE
2. CATHODE
3. ANODE
FEATURES
Low Power Loss,High Efficiency
2
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
1
3
1
3
MARKING
2
SBDB30H200CTB = Device code
SBD
B30H200CTB
XXXX
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
MAXIMUM RATINGS ( Ta=25
℃
unless otherwise noted )
Parameter
Symbol
Value
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
V
200
RMS reverse voltage
140
30
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
300
2.0
8.3ms half sine wave)
IFSM
RΘJC
RΘJA
Tj
A
℃/W
℃/W
℃
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃
62.5
175
Storage temperature
-55~+175
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
Reverse voltage
V(BR)
200
IR=0.1mA
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀX$
mA
Tj =25℃
0.07
0.1
0.5
IR
Reverse current
Forward voltage
V
R=200V
Tj =150℃
Tj =25℃
Tj =150℃
V
V
0.79
IF=10A
0.64
0.83
0.69
VF
V
V
Tj =25℃
0.90
IF=15A
Tj =150℃
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.jscj-elec.com
Rev. - 1.0
1