JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diode
SBDB40100TCTB
SCHOTTKY BARRIER RECTIFIER
MAIN CHARACTERISTICS
IO
40(2×20)A
TO-263-2L
VRRM
Tj
100 V
150 ℃
VF(typ)
0.64V (@Ta=125℃)
1. ANODE
2. CATHODE
3. ANODE
FEATURES
2
Low Power Loss,High Efficiency
1
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
3
1
3
MARKING
2
SBDB40100TCTB = Device code
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
SBD
B40100TCTB
XXXX
MAXIMUM RATINGS ( Ta=25
℃
unless otherwise noted )
Parameter
Symbol
Value
Unit
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
V
100
RMS reverse voltage
70
40
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
8.3ms half sine wave)
IFSM
RΘJC
RΘJA
Tj
250
2.0
A
℃/W
℃/W
℃
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃
62.5
150
Storage temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
100
V
IR=1mA
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Tj =25℃
20
20
100
IR
Reverse current
Forward voltage
V
R=100V
mA
V
Tj =125℃
Tj =25℃
Tj =125℃
0.53
IF=10A
IF=20A
V
0.50
0.67
VF
V
V
Tj =25℃
0.72
Tj =125℃
0.64
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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Rev. - 1.0
1