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SBDB40100TCTB PDF预览

SBDB40100TCTB

更新时间: 2024-11-17 14:54:59
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 7502K
描述
TO-263-2L

SBDB40100TCTB 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-263-2L Plastic-Encapsulate Diode  
SBDB40100TCTB  
SCHOTTKY BARRIER RECTIFIER  
MAIN CHARACTERISTICS  
IO  
4020A  
TO-263-2L  
VRRM  
Tj  
100 V  
150 ℃  
VF(typ)  
0.64V @Ta=125℃)  
1. ANODE  
2. CATHODE  
3. ANODE  
FEATURES  
2
Low Power Loss,High Efficiency  
1
Guard Ring Die Construction for Transient Protection  
High Current Capability and Low Forward Voltage Drop  
3
1
3
MARKING  
2
SBDB40100TCTB = Device code  
Solid dot = Green molding compound device  
if none, the normal device  
XXXX = Code  
SBD  
B40100TCTB  
XXXX  
MAXIMUM RATINGS ( Ta=25  
unless otherwise noted )  
Parameter  
Symbol  
Value  
Unit  
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
V
100  
RMS reverse voltage  
70  
40  
V
A
VR(RMS)  
IO  
Average rectified output current  
Non-Repetitive peak forward surge current (  
8.3ms half sine wave)  
IFSM  
RΘJC  
RΘJA  
Tj  
250  
2.0  
A
/W  
/W  
Thermal resistance from junction to case ,Tc=25  
Thermal resistance from junction to ambient  
Junction temperature  
62.5  
150  
Storage temperature  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
Reverse voltage  
V(BR)  
100  
V
IR=1mA  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀX$  
Tj =25  
20  
20  
100  
IR  
Reverse current  
Forward voltage  
V
R=100V  
mA  
V
Tj =125℃  
Tj =25℃  
Tj =125℃  
0.53  
IF=10A  
IF=20A  
V
0.50  
0.67  
VF  
V
V
Tj =25℃  
0.72  
Tj =125℃  
0.64  
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.  
www.jscj-elec.com  
Rev. - 1.0  
1

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