WTE
POWER SEMICONDUCTORS
Pb
SB620 – SB660
6.0A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
TO-220A
C
Dim
A
B
C
D
E
Min
13.90
9.80
2.54
3.56
12.70
0.51
3.55 Ø
5.75
4.16
2.03
0.30
1.14
4.83
Max
15.90
10.70
3.43
G
F
A
PIN1
3
4.56
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
14.73
0.96
F
G
H
I
4.09 Ø
6.85
Mechanical Data
!
!
E
Case: TO-220A, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
5.00
P
J
2.92
K
L
0.65
!
!
!
!
!
I
1.40
P
5.33
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 +
PIN 3 -
+
Case
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB620
20
SB630
30
SB640
SB650
50
SB660
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
60
42
V
RMS Reverse Voltage
VR(RMS)
IO
14
21
28
35
V
A
Average Rectified Output Current
@TC = 75°C
6.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
75
A
Forward Voltage
@IF = 6.0A
VFM
IRM
0.55
0.70
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.2
15
mA
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Cj
400
80
pF
°C/W
°C
RꢀJA
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on heatsink.
SB620 – SB660
1 of 4
© 2006 Won-Top Electronics