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SB545T-G PDF预览

SB545T-G

更新时间: 2024-11-13 07:17:55
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上华 - COMCHIP /
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3页 57K
描述
Leaded Schottky Barrier Rectifiers

SB545T-G 数据手册

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Leaded Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
SB520-G Thru. SB5100-G  
Voltage: 20 to 100 V  
Current: 5.0 A  
RoHS Device  
DO-201AD  
Features  
-Low drop down voltage.  
1.0(25.4) Min.  
-Metal-Semiconductor junction with guard ring  
-High surge current capability  
0.210(5.3)  
0.189(4.8)  
-Silicon epitaxial planar chips.  
-For use in low voltage, high efficiency inverters,  
free wheeling, and polarity protection applications  
0.375(9.5)  
0.287(7.3)  
-Lead-free part, meet RoHS requirements.  
1.0(25.4) Min.  
Mechanical data  
0.052(1.30)  
0.048(1.20)  
-Epoxy: UL94-V0 rated flame retardant  
-Case: Molded plastic body DO-201AD  
-Terminals: Solderable per MIL-STD-750 Method 2026  
-Polarity: Color band denotes cathode end  
-Mounting Position: Any  
Dimensions in inches and (millimeter)  
-Weight: 1.12grams  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Symbol  
Parameter  
Unit  
540-G  
520-G  
545-G  
550-G  
560-G  
580-G 5100-G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
45  
30  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375” (12.7mm) lead length at TA=75°C, See Figure 1  
I(AV)  
A
5.0  
Peak forward surge current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC method) TL=110°C  
100  
IFSM  
VF  
A
V
Maximum forward voltage at 5.0A (Note 1)  
0.55  
0.70  
0.85  
0.5  
T
A
=25°C  
=100°C  
IR  
IR  
Maximum DC reverse current  
At rated DC blocking voltage  
mA  
T
A
50  
30  
Typical junction capacitance (Note 2)  
Typical thermal resistance (Note 3)  
pF  
CJ  
350  
135  
RθJA  
RθJL  
35.0  
15.0  
°C/W  
Operating junction temperature range  
Storage temperature range  
TJ  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
-65 to +150  
NOTES:  
1. Pulse test 300µs pulse width, 1% duty cycle.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.  
3. Thermal resistance junction to ambient and from junction to lead P.C.B mounted 0.500”(12.7mm)lead length with 2.5*2.5”(63.5*63.5mm) copper pad..  
REV:A  
Page 1  
QW-BB051  
Comchip Technology CO., LTD.  

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