WTE
POWER SEMICONDUCTORS
SB2520CT – SB25100CT
25A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
TO-220
C
Dim
A
B
C
D
E
Min
14.9
—
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91 Ø
6.86
4.70
2.79
0.64
1.40
2.67
G
F
A
2.62
3.56
13.46
0.68
3.74 Ø
5.84
4.44
2.54
0.35
1.14
2.41
PIN1
2
3
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
F
G
H
I
Mechanical Data
!
!
E
Case: TO-220 Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
P
J
K
L
!
!
!
!
I
L
J
P
H
All Dimensions in mm
Marking: Type Number
PIN 1 -
PIN 3 -
+
Case PIN 2
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
Characteristic
Symbol
Unit
2520CT 2530CT 2540CT 2550CT 2560CT 2580CT 25100CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
50
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
35
25
V
A
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage
@IF = 12.5A
VFM
IRM
0.55
0.75
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
100
mA
Typical Junction Capacitance (Note 1)
Cj
1100
pF
°C
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB2520CT – SB25100CT
1 of 3
© 2002 Won-Top Electronics