Datasheet > SB2520CT_04

SB2520CT_04

更新时间： 2024-09-25 04:05:47

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
2页	39K
描述
SCHOTTKY BARRIER RECTIFIERS

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数据手册

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SB2520CT_04 数据手册

DATA SHEET

SB2520CT~SB25100CT

SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

TO-220AB

VOLTAGE

CURRENT 25 Amperes

20 to 100 Volts

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

.419(10.66)

.196(5.00)

.163(4.16)

.387(9.85)

Flame Retardant Epoxy Molding Compound.

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

Pb free: 98.5% Sn above

.038(0.96)

.019(0.50)

.025(0.65)MAX

MECHANCEALDATA

Case: TO-220AB Molded plastic

.1(2.54)

Terminals: Solder plated, solderable per MIL-STD-202, Method 208

Polarity: As marked.

Positive CT

Standard packaging: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL SB2520CT SB2530CT SB2540CT SB2550CT SB2560CT SB2580CT SB25100CT UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Current .375"(9.5mm)

lead length at Tc =90 ^OC

25.0

200

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

Maximum Forward Voltage at 12.5A, per leg

0.55

0.75

0.85

Maximum DC Reverse Current T

=25 ^OC

=100^O

0.5

100

at Rated DC Blocking Voltage

^OC

Typical Thermal Resistance

RθJC

Operating Junction Temperature Range

Storage Temperature Range

-50 TO +125

-50 TO +150

^OC

STG

NOTES:

Both Bonding and Chip structure are available.

PAGE . 1

STAD-JUL.01.2004

中文翻译

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