Datasheet > SB25100DC-T3

SB25100DC-T3

更新时间： 2024-11-11 16:54:31

品牌	Logo	应用领域
WTE		功效瞄准线二极管
页数	文件大小	规格书
4页	44K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

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SB25100DC-T3 数据手册

SB2520DC – SB25100DC

25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Low Forward Voltage



Epitaxial Construction with Oxide Passivation

Guard Ring for Transient and ESD Protection

Surge Overload Rating to 200A Peak

Low Power Loss, High Efficiency

Fast Switching

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Switching

Power Supplies

PIN 1

D²PAK/TO-263

Mechanical Data



Dim

Min

9.80

9.60

4.40

8.50

—

Max

10.40

10.60

4.80

9.10

2.80

1.40

0.99

1.40

0.70

2.75

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208



Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

Case, PIN 2

1.00

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

2520DC 2530DC 2540DC 2545DC 2550DC 2560DC 2580DC 25100DC

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

12.5

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

VFM

200

Forward Voltage

per diode

@I_F= 12.5A, T_J= 25°C

@I_F= 12.5A, T_J= 125°C

0.62

0.57

0.75

0.65

0.85

0.75

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

1.0

IRM

Typical Junction Capacitance (Note 1)

750

500

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Case (Note 2)

RθJA

RθJC

1.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.

Revision: September, 2012

www.wontop.com

12 3 4

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与SB25100DC-T3相关器件

型号	品牌	获取价格	描述	数据表
SB25100DC-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-263AB, TO-2
SB25100FCT	PACELEADER	获取价格	SCHOTTKY BARRIER RECTIFIER
SB25100FCT	PANJIT	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere)
SB25100FCT	WTE	获取价格	25A ISOLATION SCHOTTKY BARRIER RECTIFIER
SB25100FCT	WON-TOP	获取价格	Powerpack
SB25100FCT-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-220AB, ROHS
SB2510G	TSC	获取价格	High Current 15, 25, 35 AMPS. Single Phase Glass Passivated Bridge Rectifiers
SB2510M	TSC	获取价格	High Current 15 25 35 AMPS Single Phase Bridge Rectifiers
SB2510W	TSC	获取价格	High Current 15 25 35 AMPS Single Phase Bridge Rectifiers
SB2510W	RFE	获取价格	BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-3W

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