SB120-SB1A0
Schottky Barrier Rectifiers
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0 A
DO - 41
Features
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Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
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For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
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The plastic material carries U/L recognition 94V-0
Mechanical Data
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Case:JEDEC DO--41,molded plastic
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Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Dimensions in millimeters
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Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB
120
SB SB SB SB SB SB SB SB
130 140 150 160 170 180 190 1A0
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
70
49
70
80
56
80
90
63
90
100
70
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
1.0
A
9.5mm lead length,
(see fig.1)
Peak forward surge current
IFSM
8.3ms single half-sine-wave
40.0
A
superimposed on rated load @TJ=125℃
Maximum instantaneous forward voltage
@ 1.0A
VF
IR
0.5
0.7
0.85
V
Maximum reverse current
@TA=25℃
0.5
mA
at rated DC blocking voltage @TA=100℃
10.0
110
5.0
80
Typical junction capacitance (Note1)
CJ
RθJA
TJ
pF
℃/W
℃
Typical thermal resistance
(Note2)
50
Operating junction temperature range
Storage temperature range
- 55 --- + 125
- 55 --- + 150
- 55 --- + 150
TSTG
℃
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
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