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SB10100CT PDF预览

SB10100CT

更新时间: 2024-11-10 19:50:59
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 134K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN

SB10100CT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.07Is Samacsys:N
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SB10100CT 数据手册

 浏览型号SB10100CT的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
SB1020CT  
THRU  
Micro Commercial Components  
SB10100CT  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
High surge capacity, High current capability  
10 Amp  
Schottky Barrier  
Rectifier  
20 to 100 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
TO-220AB  
Microsemi  
Catalog  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Maximum Maximum  
C
B
RMS  
Voltage  
DC  
Blocking  
Voltage  
S
Number  
F
Reverse  
Voltage  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
4
3
Q
T
SB1020CT SB1020CT  
SB1030CT SB1030CT  
SB1040CT SB1040CT  
SB1050CT SB1050CT  
SB1060CT SB1060CT  
SB1080CT SB1080CT  
SB10100CT SB10100CT  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
A
U
1
2
H
PIN 1.  
PIN 2.  
PIN 3.  
PIN 4.  
ANODE  
CATHODE  
ANODE  
K
CATHODE  
V
D
L
J
R
Electrical Characteristics @ 25°C Unless Otherwise Specified  
G
Average Forward  
Current  
IF(AV)  
10A  
TC = 100°C  
N
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢇ ꢇ ꢇ ꢇ  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
INCHES  
ꢂꢁꢄ  
MM  
ꢀꢁꢂ  
A
B
ꢂꢈꢉ  
ꢂꢁꢄ  
15.11  
9.65  
ꢂꢈꢉ  
15.75  
10.29  
4.82  
ꢄꢆꢊꢃ  
.595  
.380  
.160  
.620  
.405  
.190  
C
4.06  
D
F
G
H
J
K
L
.025  
.142  
.190  
.110  
.018  
.500  
.045  
.035  
.147  
.210  
.130  
.025  
.562  
.060  
0.64  
3.61  
4.83  
2.79  
0.46  
12.70  
1.14  
0.89  
3.73  
5.33  
3.30  
0.64  
14.27  
1.52  
Maximum Forward  
Voltage Drop Per  
VF  
IR  
.55V  
IFM = 10 A mper  
1020CT-1040CT  
1050CT-1060CT  
1080CT-10100CT  
Element  
TA =  
25°C  
.75V  
.85V  
Q
.100  
.120  
2.54  
3.04  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
R
S
T
.080  
.045  
.235  
------  
.110  
.055  
.255  
.050  
2.04  
1.14  
5.97  
-----  
2.79  
1.39  
6.48  
1.27  
U
0.5mA TJ = 25°C  
50mA  
Voltage  
MBR1020-1045  
MBR1060-10100  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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