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SAH02 PDF预览

SAH02

更新时间: 2024-11-17 22:22:27
品牌 Logo 应用领域
三垦 - SANKEN 晶体稳压器二极管小信号双极晶体管开关光电二极管
页数 文件大小 规格书
1页 25K
描述
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode(Chopper Regulator)

SAH02 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

SAH02 数据手册

  
Equivalent circuit  
2
4
1
3
S AH0 2  
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode  
Application : Chopper Regulator  
External Dimensions PS Pack  
(Ta=25°C)  
(Ta=25°C)  
Absolute maximum ratings  
Electrical Characteristics  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
SAH02  
SAH02  
Unit  
V
Symbol  
Conditions  
VCB=30V  
VEB=10V  
IC=10mA  
Unit  
µA  
µA  
V
2
3
10max  
10max  
30min  
–30  
ICBO  
a
b
–30  
–10  
V
IEBO  
4
1
V(BR)CEO  
hFE1  
V
±0.2  
1.4  
±0.2  
max  
3.6  
100min  
150min  
V
CE=2V, I  
CE=2V, I  
=0.5A, I  
CE=12V, I  
CB=10V, f=1MHz  
C
=1A  
=0.5A  
=20mA  
=0.3A  
–3  
A
max  
6.8  
4.0  
IB  
hFE2  
V
C
–0.5  
A
±0.5  
±0.2  
8.0  
6.3  
V
MHz  
pF  
PC  
0.3max  
100typ  
45typ  
VCE(sat)  
fT  
I
C
B
800(Ta=25°C)  
125  
mW  
°C  
°C  
Tj  
V
E
Tstg  
COB  
V
–40 to +125  
0~0.1  
VR  
VF  
IR=100µA  
IF=0.5A  
30 min  
0.55 max  
15 typ  
V
V
±0.3  
1.0  
±0.2  
±0.3  
Weight : Approx 0.23g  
a. Type No.  
b. Lot No.  
3.0  
9.8  
t r r  
IF=±100mA  
ns  
IC VCE Characteristics (Typical)  
Diode IF VF Characteristics  
IC VBE Temperature Characteristics (Typical)  
(VCE=–2V)  
–100mA  
–20mA  
3
2
1
0
–3  
–3  
–2  
–1  
0
–2  
–1  
0
0
–1  
–2  
–3  
–4  
–5  
–6  
0
0.5  
1.0  
0
–0.5  
–1.0  
–1.5  
Collector-Emitter Voltage VCE(V)  
Forward Voltage VF(V)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
tontstgtf IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–2V)  
300  
100  
1000  
1.0  
0.8  
VCC  
12V  
–IB1=IB2=30mA  
125˚C  
500  
tstg  
25˚C  
0.6  
ton  
–30˚C  
10  
0.4  
0.2  
0
tf  
1
100  
–0.01  
0.3  
–0.05  
–0.1  
–0.5  
–1  
–3  
0.001  
0.01  
0.1  
1
10  
100  
1000  
–0.1  
–0.5  
–1  
–3  
Collector Current IC(A)  
Collector Current IC(A)  
Time t(ms)  
Safe Operating Area (Single Pulse)  
VCE(sat) IB Temperature Characteristics (Typical)  
Pc Ta Derating  
(IC=–0.5A)  
1.0  
–1.5  
–1.0  
–5  
–1  
100µs  
–30˚C  
25˚C  
125˚C  
–0.5  
0.5  
–0.5  
–0.1  
Without Heatsink  
Natural Cooling  
Glass epoxy substrate  
(95 x 69 x 1.2mm)  
Natural Cooling  
–0.05  
–0.03  
0
–1  
0
–3  
–5  
–10  
–50  
–5  
–10  
–50 –100  
–300  
0
25  
50  
75  
100  
125  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Ambient Temperature Ta(˚C)  
162  

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