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SA8.5A-B PDF预览

SA8.5A-B

更新时间: 2024-11-07 20:40:15
品牌 Logo 应用领域
美台 - DIODES 局域网二极管
页数 文件大小 规格书
1页 168K
描述
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon

SA8.5A-B 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.31
Is Samacsys:N最大击穿电压:10.4 V
最小击穿电压:9.44 V外壳连接:ISOLATED
最大钳位电压:14.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大反向电流:10 µA
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SA8.5A-B 数据手册

  

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