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SA6V5CA-HF PDF预览

SA6V5CA-HF

更新时间: 2024-11-05 04:25:15
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
6页 125K
描述
Trans Voltage Suppressor Diode,

SA6V5CA-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.75
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SA6V5CA-HF 数据手册

 浏览型号SA6V5CA-HF的Datasheet PDF文件第2页浏览型号SA6V5CA-HF的Datasheet PDF文件第3页浏览型号SA6V5CA-HF的Datasheet PDF文件第4页浏览型号SA6V5CA-HF的Datasheet PDF文件第5页浏览型号SA6V5CA-HF的Datasheet PDF文件第6页 
Axial Lead Transient Voltage Suppressor  
SA5V0-HF Thru. SA191-HF Series  
Working Peak Reverse Voltage: 5.0 to 190 Volts  
Peak Pulse Power: 500 Watts  
RoHS Device  
Halogen Free  
DO-15  
Features  
- Glass passivated chip.  
- Low leakage.  
- 500W peak pulse power capability with a  
10/1000μs waveform, repetitive rate (duty  
cycle): 0.01%.  
1.000(25.40) Min.  
- Uni and Bidirectional unit.  
0.300(7.63)  
0.228(5.80)  
- Excellent clamping capability.  
- Very fast response time.  
0.142(3.61) DIA.  
0.102(2.60) DIA.  
1.000(25.40) Min.  
Mechanical data  
- Case: Molded plastic DO-15  
- Epoxy: UL 94V-0 rate flame retardant  
0.035(0.90) DIA.  
0.027(0.70) DIA.  
- Terminals: Axial leads solderable per MIL-STD-202,  
Method 208  
Dimensions in inches and (millimeter)  
- Polarity: Color band denotes cathode end  
except bipolar  
- Mounting position: Any  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristics  
Symbol  
Units  
Peak power dissipation with a 10/1000μS  
waveform (Note 1)  
PPP  
500  
W
Peak pulse current with a 10/1000μS  
IPPM  
PD  
See Next Table  
3.0  
A
waveform (Note 1)  
Power dissipation on infinite heatsink at  
TL=75°C  
W
Peak forward surge current, 8.3ms single  
half sine-wave uni-directional only (Note 2)  
IFSM  
70  
A
Maximum instantaneous forward voltage  
at 25A for uni-directional only (Note 3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature  
range  
TJ,TSTG  
-55 to +150  
°C  
NTOES:  
(1) Non-repetitive current pulse per fig.5 and derated above TA=25°C per fig. 1.  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
QW-JTV12  
Comchip Technology CO., LTD.  

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