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SA64HE3/54 PDF预览

SA64HE3/54

更新时间: 2024-01-06 08:16:50
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 103K
描述
Trans Voltage Suppressor Diode, 64V V(RWM), Unidirectional,

SA64HE3/54 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.83
击穿电压标称值:79 V最大钳位电压:114 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
极性:UNIDIRECTIONAL最大重复峰值反向电压:64 V
子类别:Transient Suppressors表面贴装:NO
端子面层:Matte Tin (Sn)Base Number Matches:1

SA64HE3/54 数据手册

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SA5.0 thru SA170CA  
Vishay General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 500 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
DO-204AC (DO-15)  
• Low incremental surge resistance  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
VWM  
5.0 V to 170 V  
PPPM  
500 W  
3.0 W  
70 A  
PD  
I
FSM (uni-directional only)  
TJ max.  
175 °C  
MECHANICAL DATA  
Case: DO-204AC, molded epoxy over passivated chip  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use  
(e.g. SA5.0C, SA170CA).  
C
or CA suffix  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
500  
See next table  
3.0  
A
Power dissipation on infinite heatsink at TA = 75 °C (Fig. 5)  
Peak forward surge current, 10 ms single half sine-wave uni-directional only  
Maximum instantaneous forward voltage at 35 A for uni-directional only (2)  
Operating junction and storage temperature range  
PD  
W
IFSM  
70  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum  
Document Number: 88378  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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