Datasheet > SA60HE3/54

SA60HE3/54

更新时间： 2024-11-03 20:53:07

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	103K
描述
Trans Voltage Suppressor Diode, 60V V(RWM), Unidirectional,

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SA60HE3/54 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.82
击穿电压标称值：	74.1 V	最大钳位电压：	107 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	60 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

SA60HE3/54 数据手册

SA5.0 thru SA170CA

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 500 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

DO-204AC (DO-15)

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of sensor

units for consumer, computer, industrial and

telecommunication.

V_WM

5.0 V to 170 V

P_PPM

500 W

3.0 W

70 A

P_D

_FSM(uni-directional only)

T_Jmax.

175 °C

MECHANICAL DATA

Case: DO-204AC, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use

(e.g. SA5.0C, SA170CA).

or CA suffix

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

500

See next table

3.0

Power dissipation on infinite heatsink at T_A= 75 °C (Fig. 5)

Peak forward surge current, 10 ms single half sine-wave uni-directional only

Maximum instantaneous forward voltage at 35 A for uni-directional only ⁽²⁾

Operating junction and storage temperature range

P_D

I_FSM

V_F

3.5

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum

Document Number: 88378

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6 7

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与SA60HE3/54相关器件

型号	品牌	获取价格	描述	数据表
SA60-HE3/54	VISHAY	获取价格	500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
SA60T	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SA60-T3	WTE	获取价格	Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-1
SA60-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-1
SA60-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-1
SA60-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-1
SA60-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode,
SA611	NXP	获取价格	1GHz low voltage LNA and mixer
SA611DH	NXP	获取价格	暂无描述
SA611DK	NXP	获取价格	1GHz low voltage LNA and mixer

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