Datasheet > SA6.0CB

SA6.0CB

更新时间： 2024-11-02 19:57:47

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网二极管
页数	文件大小	规格书
6页	968K
描述
Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-15,

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中文翻译

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技术参数
数据手册

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SA6.0CB 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-15	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.41	其他特性：	EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：	7.722 V	最小击穿电压：	6.318 V
击穿电压标称值：	7 V	外壳连接：	ISOLATED
最大钳位电压：	10.3 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AC	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
最大功率耗散：	3 W	认证状态：	Not Qualified
最大重复峰值反向电压：	6 V	子类别：	Transient Suppressors
表面贴装：	NO	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

SA6.0CB 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 500W > SA series

RoHS

SA Series

Description

The SA Series is designed specifically to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Bi-directional

Features

Uni-directional

• V_BR@T_J= V_BR@25°C × (1+αT • ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

x (T_J- 25))

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in DO-15 Package

• 500W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E128662/E230531

• Typical I_Rless than 1μA

above 13V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Parameter

Symbol

P_PPM

Value

500

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC (Fig. 6)

P_D

3.0

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 35A for Unidirectional

Only (Note 3)

I_FSM

15kV(Air), 8kV (Contact).

V_F

3.5/5.0

Applications

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 150

°C

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_A= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Additional Information

Functional Diagram

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 09/13/13

12 3 4 5 6

中文翻译

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与SA6.0CB相关器件

型号	品牌	获取价格	描述	数据表
SA6.0C-B	LITTELFUSE	获取价格	TVS DIODE
SA6.0C-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional,
SA6.0CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
SA6.0C-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-204AC, PLASTIC
SA6.0C-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 6V V(RWM), Bidirectional,
SA6.0C-E3/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-204AC, PLASTIC
SA6.0CE3/TR12	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
SA6.0CE3/TR8	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-41,
SA6.0C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-15,
SA6.0C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-15,

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