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SA51C

更新时间: 2024-02-02 21:51:07
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
6页 1020K
描述
Trans Voltage Suppressor Diode, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-15, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2

SA51C 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:unknown
风险等级:5.66其他特性:EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
最大击穿电压:69.3 V最小击穿电压:56.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:3 W最大重复峰值反向电压:51 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SA51C 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 500W > SA series  
Pb e3  
RoHS  
SA Series  
Description  
Bi-directional  
The SA Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Uni-directional  
Features  
• 500W peak pulse  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Low incremental surge  
resistance  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Glass passivated chip  
junction in DO-15 Package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
Agency Approvals  
Typical IR less than 1μA  
when VBR max>13V  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• High temperature  
to reflow soldering  
guaranteed: 260°C/40sec  
/ 0.375,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
500  
Unit  
W
• Plastic package is  
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
• Excellent clamping  
capability  
flammability rated V-0 per  
Underwriters Laboratories  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
3.0  
70  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 35A for Unidirectional  
Only  
IFSM  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -65 to 175  
°C  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
TypicalThermal Resistance Junction  
to Lead  
°C/W  
°C/W  
RθJL  
RθJA  
20  
75  
TypicalThermal Resistance Junction  
to Ambient  
Applications  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
V
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
Functional Diagram  
Additional Infomarion  
Datasheet  
Samples  
Resources  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/20/15  

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