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P4KE51CA-B PDF预览

P4KE51CA-B

更新时间： 2024-11-25 05:54:47
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管局域网
页数 文件大小 规格书
5页 140K
描述
Transient Voltage Suppression Diodes

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中文翻译

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P4KE51CA-B 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：1.28
其他特性：UL RECOGNIZED最大击穿电压：53.6 V
最小击穿电压：48.5 V击穿电压标称值：51 V
外壳连接：ISOLATED最大钳位电压：70.1 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：2最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL最大功率耗散：1.5 W
认证状态：Not Qualified最大重复峰值反向电压：43.6 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：30Base Number Matches：1

P4KE51CA-B 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 400W > P4KE series  
RoHS  
P4KE Series  
Description  
The P4KE Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 5ZQJDBMꢀ*R less than 1μA  
above 13V  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ  
soldering guaranteed:  
Agency Approvals  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
260°C/40 seconds /  
0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability classification  
94V-O  
junction in DO-41 Package  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0 Volts to BV min  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Parameter  
Symbol  
PPPM  
Value  
400  
Unit  
W
Peak Pulse Power Dissipation by  
10x1000μs test waveform (Fig.1)  
(Note 1)  
Steady State Power Dissipation on  
inifinite heat sink atTL=75ºC (Fig. 5)  
Applications  
PD  
1.5  
40  
W
A
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 25A for Unidirectional  
only (Note 3)  
IFSM  
V
computer, industrial and consumer electronic applications.  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -55 to 175  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
60  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
100  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR<_ 200V and VF<5.0V for devices of VBR >_ 201V.  
©2009 Littelfuse, Inc.  
65  
Revision: January 09, 2009  
P4KE Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/P4KE.html for current information.  
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中文翻译

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P4KE51CA-B 替代型号

型号 品牌 替代类型 描述 数据表
P4KE51CA LITTELFUSE

完全替代

 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
SA54C LITTELFUSE

功能相似

 Trans Voltage Suppressor Diode, 54V V(RWM), Bidirectional, 1 Element, Silicon, DO-15, HALO
P6KE62C LITTELFUSE

功能相似

 Silicon Avalanche Diodes - Silicon Avalanche Diodes

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