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SA51B PDF预览

SA51B

更新时间: 2024-02-20 21:17:17
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
6页 1034K
描述
Trans Voltage Suppressor Diode, 500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN

SA51B 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.54
最大击穿电压:69.3 V最小击穿电压:56.7 V
外壳连接:ISOLATED最大钳位电压:91.1 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大反向电流:3 µA表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SA51B 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 500W > SA series  
RoHS  
SA Series  
Description  
The SA Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Bi-directional  
Features  
Uni-directional  
VBR @TJ= VBR@25°C × (1+αT • ESD protection of data  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
x (TJ - 25))  
(αT:Temperature Coefficient)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
• Low incremental surge  
resistance  
• Glass passivated chip  
junction in DO-15 Package  
• 500W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E128662/E230531  
Typical IR less than 1μA  
above 13V  
• High temperature  
soldering guaranteed:  
260°C/40 seconds /  
0.375,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• Plastic package has  
underwriters laboratory  
flammability classification  
94V-O  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
• Excellent clamping  
capability  
Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Parameter  
Symbol  
PPPM  
Value  
500  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC (Fig. 6)  
PD  
3.0  
70  
W
A
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 35A for Unidirectional  
Only (Note 3)  
IFSM  
15kV(Air), 8kV (Contact).  
VF  
3.5/5.0  
V
Applications  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 150  
°C  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
V
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
20  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25°C per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR<_ 200V and VF<5.0V for devices of VBR >_ 201V.  
Additional Information  
Functional Diagram  
Datasheet  
Resources  
Samples  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2014 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 01/24/14  

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