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SA5.0

更新时间： 2024-11-03 19:52:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 1020K
描述
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-15, PLASTIC PACKAGE-2

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中文翻译

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SA5.0 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.11
其他特性：EXCELLENT CLAMPING CAPABILITY最大击穿电压：7.3 V
最小击穿电压：6.4 V外壳连接：ISOLATED
最大钳位电压：9.6 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-15JESD-30 代码：O-PALF-W2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Not Qualified
最大重复峰值反向电压：5 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

SA5.0 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 500W > SA series  
Pb e3  
RoHS  
SA Series  
Description  
Bi-directional  
The SA Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Uni-directional  
Features  
• 500W peak pulse  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Low incremental surge  
resistance  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Glass passivated chip  
junction in DO-15 Package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
Agency Approvals  
• Typical IR less than 1μA  
when VBR max>13V  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• High temperature  
to reflow soldering  
guaranteed: 260°C/40sec  
/ 0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
500  
Unit  
W
• Plastic package is  
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
• Excellent clamping  
capability  
flammability rated V-0 per  
Underwriters Laboratories  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
3.0  
70  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 35A for Unidirectional  
Only  
IFSM  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -65 to 175  
°C  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
TypicalThermal Resistance Junction  
to Lead  
°C/W  
°C/W  
RθJL  
RθJA  
20  
75  
TypicalThermal Resistance Junction  
to Ambient  
Applications  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
V
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
Functional Diagram  
Additional Infomarion  
Datasheet  
Samples  
Resources  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/20/15  
123456

中文翻译

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SA5.0 替代型号

型号 品牌 替代类型 描述 数据表
SA5.0A-B LITTELFUSE

类似代替

 Transient Voltage Suppression Diodes
SA5.0A LITTELFUSE

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 Silicon Avalanche Diodes - 500 Watt Axial Leaded Transient Voltage Suppressors
SA6.0A LITTELFUSE

类似代替

 Silicon Avalanche Diodes - 500 Watt Axial Leaded Transient Voltage Suppressors

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