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SA33AE3 PDF预览

SA33AE3

更新时间: 2024-11-12 18:49:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 468K
描述
Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2

SA33AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.63
最大击穿电压:40.6 V最小击穿电压:36.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:2.5 W
最大重复峰值反向电压:33 V表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SA33AE3 数据手册

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